parameter conditions forward rectified current forward surge current reverse current diode junction capacitance ambient temperature = 55 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r c j a a a pf 1.0 30 5.0 v = v t = 25 c r rrm j o v = v t = 125 c r rrm j o 15 100 ef101pg ef102pg ef103pg 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =1.0a *5 reverse recovery time f , note 1 v f (v) *4 ef105pg 600 420 1.75 -55 to +150 t rr (ns) *5 50 100 200 600 0.875 EF104PG 400 280 400 storage temperature t stg o c +175 -65 (c) o operating temperature t, j 1.25 25 low profile surface mounted application in order to optimize board space. high current & surge capability lead-free parts meet environmental standards of mil-std-19500 /228 ? ? trr less than 25ns for high efficiency suffix "-h" indicates halogen free parts, ex. ef101pg-h. . glass passivated chip junction. ? ? ? ? ? low forward dropdown voltage 1.0(25.4) min. 1.0(25.4) min. .205(5.2) .166(4.2) .034(.9) .028(.7) .107(2.7) .080(2.0) dia. dia. ? ? ? ? ? ? epoxy : ul94-v0 rated flame retardant case : molded plastic, do-41 : axial leads, solderable per mil-std-202, method 208 guaranteed polarity: color band denotes cathode end mounting position : any lead weight : approximated 0.33 gram note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr ef101pg thru ef105pg chip silicon rectifier 1.0a glass passivated sufrace mount efficient fast rectifiers - 50-600v features mechanical data do-41 package outline dimensions in inches and (millimeters) maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
rating and characteristic curves fig.1-typical forward characteristics fig.4-maximum non-repetitive forward surge current peak for ward surge current ,(a) fig.5-typical junction capacitance instantaneous for ward current ,(a) forward voltage,(v) 0 10 15 25 30 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 10 / 20ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive fig.2-typical forward current average for ward current ,(a) 0.2 0 0.4 0.6 0.8 1.0 1.2 derating curve reverse voltage,(v) junction cap acitance,(pf) 40 30 25 20 15 10 5 0 .01 .05 .1 .5 1 5 10 50 100 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0.375"(9.5mm) lead length ambient temperature ( c) 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 tj=25 c o pulse width =300 s 1% duty cycle ef101pg - ef103pg EF104PG ef105pg 20 ef101pg thru ef105pg page 2/2 www.first-semi.com
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